RENO, Nev., April 30, 2020 (GLOBE NEWSWIRE) -- Reno Sub-Systems, Inc. (Reno), a developer of high performance radio frequency (RF) matching networks for leading-edge nanoscale semiconductor ...
In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...
This application note describes the way to design an output matching network at a given load resistance. The document presented can also be used in all Melexis transmitter and transceiver integrated ...
Challenges like higher selectivity and precise etching are critical for angstrom-scale IC production. Advanced RF pulsing and plasma control enhance precision in sub-nanometer processes. New impedance ...
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