High electron mobility transistors (HEMTs) represent a critical evolution in semiconductor technology by harnessing the advantages of wide bandgap materials such as gallium nitride (GaN) to achieve ...

Improving the efficiency of moving electrons through a material will help empower the next generation of technologies. Scientists at MIT improved electron mobility, which measures how quickly ...

Scientists observed record-breaking electron mobility — seven times higher than in conventional semiconductors — with a material made from the same elements as quartz and gold. When you purchase ...

The wish list of device properties that designers of power management systems would like to have is lengthy, but no single material is yet sufficient for the full range of power control applications.